feb.1999 mitsubishi semiconductor triac ? bcr16a, BCR16B, bcr16c, bcr16e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type bcr16a, BCR16B, bcr16c, bcr16e application contactless ac switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature conditions unit a a a 2 s w w v a c ratings 16 170 121 5 0.5 10 2 C20 ~ +125 ] 1. gate open. commercial frequency, sine full wave, 360 conduction bcr16a, b, c bcr16e t c =99 c t b =71 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current ?i t (rms) ...................................................................... 16a ?v drm ..............................................................400v/500v ?i fgt ! , i rgt ! , i rgt # ........................................... 30ma symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 600 10 500 700 2 1 3 f 2.0 min 1 2 3 3 max f 8.7 max f 2.0 min 6.5 max 19 max 14 max f 11.1 max 1
2
3
t 1 terminal t 2 terminal gate terminal outline drawing dimensions in mm bcr16a
feb.1999 mitsubishi semiconductor triac ? bcr16a, BCR16B, bcr16c, bcr16e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type maximum ratings (continue) test conditions bcr16a BCR16B bcr16c bcr16e bcr16a only, 10 sec. bcr16c only (typical value) bcr16e only, t a =25 c, ac 1 minute, t 2 terminal to base symbol t stg v iso parameter storage temperature weight (typical value) soldering temperature mounting torque isolated voltage ratings C20 ~ +125 3.0 8.5 8.5 9.5 230 30 2.94 1500 unit c g c kgcm nm v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) r th (j-b) (dv/dt) c test conditions t j =125 c, v drm applied t c =25 c, t b =25 c (bcr16e only), i tm =25a , instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case (bcr16a, BCR16B, bcr16c) junction to base (bcr16e) unit ma v v v v ma ma ma v c/w c/w v/ m s typ. ! @ # ! @ # parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. electrical characteristics test conditions voltage class 8 10 v drm (v) 400 500 min. 10 10 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C8a/ms 3. peak off-state voltage v d =400v limits min. 0.2 ] 3 max. 3.0 1.6 1.5 1.5 1.5 30 30 30 1.2 2.5 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
feb.1999 mitsubishi semiconductor triac ? bcr16a, BCR16B, bcr16c, bcr16e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 4.4 0.4 1.2 2.0 2.8 3.6 0.8 1.6 2.4 3.2 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 25? t b = 25? 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v gd = 0.2v p gm = 5.0w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) gate characteristics gate voltage (v) gate current (ma) 200 160 120 80 40 180 140 100 60 20 0 160 60 ?0 ?0 0 20 40 80 100 120 140 test procedure i , ii and iii gate trigger current gate trigger voltage gate trigger current voltage vs. junction temperature junction temperature (?) 100 (%) gate trigger current ?voltage ( t j = t c ) gate trigger current ?voltage ( t j = 25 ? ) performance curves 1 2 3 5.3 max ( f 16) 23?.2 f 33 max 2- f 3.2 min 20 max 21 max 1
2
3
t 1 terminal t 2 terminal gate terminal outline drawing dimensions in mm BCR16B bcr16e bcr16c (16.2) 1 2 3 1.9 max 10 max f 2.0 min m6 1.0 14 f 8.7 max 3 min 1 2 3 f 8.7 max 1.8 max 2- f 3.2 min 23?.2 33 max 20 max f 2.0 min 15.5 max 8 max 20.5 max 16 max 8.5 max f 2.5 min f 2.0 min 1 2 3 f 8.7 max 1.8 max 16 max 22 max 10 max f 2.0 min 21 max
feb.1999 23 10 ? 5710 0 23 5 23 10 2 5710 3 710 1 23 5710 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 23 10 ? 5710 0 23 5710 1 23 5710 2 2.4 2.0 1.6 1.2 0.8 0.4 0 2.8 3.2 23 10 2 5710 3 23 5710 4 23 5710 5 160 120 100 60 20 0 20 0 2 6 10 14 16 18 40 80 140 4812 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased curves apply regardless of conduction angle natural convection : mounting on fin with solder : mounting plate without grease 40 30 25 15 5 0 20 0 2 6 10 14 16 18 10 20 35 4812 360 conduction resistive, inductive loads 160 120 100 60 20 0 20 0 2 6 10 14 16 18 40 80 140 4812 bcr16a, BCR16B, bcr16c bcr16e curves apply regardless of conduction angle 360 conduction resistive, inductive loads 160 120 100 60 20 0 20 0 2 6 10 14 16 18 40 80 140 4812 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) maximum transient thermal impedance characteristics (junction to base) (bcr16e) transient thermal impedance (?/ w) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to case) (bcr16a, b, c) transient thermal impedance (?/ w) conduction time (cycles at 60hz) allowable ambient temperature vs. rms on-state current (bcr16a) ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current (BCR16B) ambient temperature (?) rms on-state current (a) curves apply regardless of conduction angle natural convection : mounting on fin without grease : insulated plate with grease mitsubishi semiconductor triac ? bcr16a, BCR16B, bcr16c, bcr16e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type
feb.1999 mitsubishi semiconductor triac ? bcr16a, BCR16B, bcr16c, bcr16e medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type allowable ambient temperature vs. rms on-state current (bcr16c) ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current (bcr16e) ambient temperature (?) rms on-state current (a) 160 120 100 60 20 0 20 0 2 6 10 14 16 18 40 80 140 4812 80 80 t2.0 160 160 t4.0 120 120 t3.0 curves apply regardless of conduction angle all fins are black painted aluminum and greased resistive, inductive loads natural convection 160 120 100 60 20 0 20 0 2 6 10 14 16 18 40 80 140 4812 80 80 t2.0 160 160 t4.0 120 120 t3.0 curves apply regardless of conduction angle : mounting on fin with grease : mica plate with grease all fins are black painted aluminum and greased natural convection 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
|
